| 发明名称 |
BONDING WIRE FOR SEMICONDUCTOR DEVICES |
| 摘要 |
Provided is a bonding wire capable of reducing the occurrence of defective loops. The bonding wire includes: a core material which contains more than 50 mol % of a metal M; an intermediate layer which is formed over the surface of the core material and made of Ni, Pd, the metal M, and unavoidable impurities, and in which the concentration of the Ni is 15 to 80 mol %; and a coating layer formed over the intermediate layer and made of Ni, Pd and unavoidable impurities. The concentration of the Pd in the coating layer is 50 to 100 mol %. The metal M is Cu or Ag, and the concentration of Ni in the coating layer is lower than the concentration of Ni in the intermediate layer. |
| 申请公布号 |
US2016315063(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201415105707 |
申请日期 |
2014.12.04 |
| 申请人 |
NIPPON STEEL & SUMIKIN MATERIALS CO., LTD. ;NIPPON MICROMETAL CORPORATION |
发明人 |
UNO Tomohiro;HAGIWARA Yoshiaki;OYAMADA Tetsuya;ODA Daizo |
| 分类号 |
H01L23/00;B23K35/32;B23K35/30 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A bonding wire for a semiconductor device comprising:
a core material containing more than 50 mol % of a metal M; an intermediate layer formed over a surface of the core material and made of Ni, Pd, the metal M, and unavoidable impurities, concentration of the Ni being 15 to 80 mol %; and a coating layer formed over the intermediate layer and made of Ni, Pd and unavoidable impurities, the concentration of the Pd being 50 to 100 mol %, wherein the metal M is Cu or Ag, and the concentration of the Ni in the coating layer is lower than the concentration of the Ni in the intermediate layer. |
| 地址 |
Tokyo JP |
