NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A nonvolatile memory device and a manufacturing method thereof are provided to restrain the convergence of an electric field between a first corner of an active region and a second corner of a floating gate by using an insulating pattern. An isolation layer(60) for defining an active region is formed on a semiconductor substrate(50). A tunnel insulating layer(70) is formed on the active region. An insulating pattern(66) is formed at an edge portion of the active region. A floating gate(72f) is formed on the tunnel insulating layer and the insulating pattern. A control gate electrode(76) is formed on the floating gate. The control gate electrode crosses over the active region and the isolation layer. An inter-gate dielectric is interposed between the floating gate and the control gate. The insulating pattern contacts a lower edge portion and a sidewall of the floating gate.