| 发明名称 |
PHASE TRANSFORMATION IN TRANSITION METAL DICHALCOGENIDES |
| 摘要 |
Devices including transition metal dichalcognides and methods of forming and operating such devices are disclosed. In one disclosed method, a layer of a transition metal dichalcogenide is provided, and a phase transformation of at least a region of the layer of the transition metal dichalcogenide is induced. |
| 申请公布号 |
US2016181516(A1) |
申请公布日期 |
2016.06.23 |
| 申请号 |
US201514627296 |
申请日期 |
2015.02.20 |
| 申请人 |
Board of Trustees of the Leland Stanford Junior University |
发明人 |
Reed Evan J.;Duerloo Karel-Alexander;Li Yao |
| 分类号 |
H01L45/00;G02F1/00;G02F1/03;G11C13/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of operating an electronic or optoelectronic device, comprising:
providing a layer of a transition metal dichalcogenide; and inducing a phase transformation of at least a region of the layer of the transition metal dichalcogenide. |
| 地址 |
Palo Alto CA US |
