发明名称 半導体装置の作製方法
摘要 One object is to provide a new semiconductor device whose standby power is sufficiently reduced. The semiconductor device includes a first power supply terminal, a second power supply terminal, a switching transistor using an oxide semiconductor material and an integrated circuit. The first power supply terminal is electrically connected to one of a source terminal and a drain terminal of the switching transistor. The other of the source terminal and the drain terminal of the switching transistor is electrically connected to one terminal of the integrated circuit. The other terminal of the integrated circuit is electrically connected to the second power supply terminal.
申请公布号 JP5948448(B2) 申请公布日期 2016.07.06
申请号 JP20150016956 申请日期 2015.01.30
申请人 株式会社半導体エネルギー研究所 发明人 山崎 舜平
分类号 H01L21/336;H01L21/8238;H01L27/08;H01L27/092;H01L29/786 主分类号 H01L21/336
代理机构 代理人
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