| 发明名称 |
Nanowire LED Structure and Method for Manufacturing the Same |
| 摘要 |
A method for ablating a first area of a light emitting diode (LED) device which includes an array of nanowires on a support with a laser is provided. The laser ablation exposes a conductive layer of the support that is electrically connected to a first conductivity type semiconductor nanowire core in the nanowires, to form a first electrode for the LED device. In embodiments, the nanowires are aligned at least 20 degrees from the plane of the support. A light emitting diode (LED) structure includes a first electrode for contacting a first conductivity type nanowire core, and a second electrode for contacting a second conductivity type shell enclosing the nanowire core, where the first electrode and/or at least a portion of the second electrode are flat. |
| 申请公布号 |
US2016211406(A1) |
申请公布日期 |
2016.07.21 |
| 申请号 |
US201514973394 |
申请日期 |
2015.12.17 |
| 申请人 |
GLO AB |
发明人 |
Herner Scott Brad |
| 分类号 |
H01L33/00;H01L33/44;H01L33/42;H01L33/24;H01L33/38 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising ablating a first area of an light emitting diode (LED) device with a laser, the LED device comprising an array of nanowires on a support, wherein the laser ablation exposes a conductive layer of the support that is electrically connected to a first conductivity type semiconductor nanowire core in the nanowires, to form a first electrode for the LED device. |
| 地址 |
Lunds SE |
