MULTILAYER MAGNETIC THIN FILM STACK AND NON-VOLATILE MEMORY DEVICE INCLUDING SAME

摘要

The present invention relates to a multilayer magnetic thin film stack and a non-volatile memory device using a magnetic tunneling junction (MTJ). A multilayer magnetic thin film stack according to an embodiment of the present invention comprises a tunneling barrier layer, a magnetic fixed layer on a first surface of the tunneling barrier layer, and a magnetic free layer on a second surface opposite to the first surface of the tunneling barrier layer. In an embodiment, at least one of the magnetic fixed layer and the magnetic free layer has a body-centered cubic structure due to the tunnel barrier layer, and comprises: a first CoFe-based magnetic layer containing cobalt (Co) and iron (Fe); a second magnetic layer interlayer-magnetic-exchange-coupled with the CoFe-based magnetic layer; and a first complex spacer layer placed between the first CoFe-based magnetic layer and the second magnetic layer and including a laminated structure of a tantalum (Ta) layer adjacent to the CoFe-based magnetic layer and a ruthenium (Ru) layer adjacent to the second magnetic layer.