| 发明名称 |
SEMICONDUCTOR DEVICE AND STRUCTURE |
| 摘要 |
A semiconductor device, including: a first memory cell including a first transistor; a second memory cell including a second transistor, where the second transistor overlays the first transistor and the second transistor self-aligned to the first transistor; and a plurality of junctionless transistors, where at least one of the junctionless transistors controls access to at least one of the memory cells. |
| 申请公布号 |
US2016343774(A1) |
申请公布日期 |
2016.11.24 |
| 申请号 |
US201615224929 |
申请日期 |
2016.08.01 |
| 申请人 |
Monolithic 3D Inc. |
发明人 |
Or-Bach Zvi;Sekar Deepak C.;Cronquist Brian;Beinglass Israel;Wurman Zeev |
| 分类号 |
H01L27/24;H01L45/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first memory cell comprising a first transistor; a second memory cell comprising a second transistor,
wherein said second transistor overlays said first transistor and said second transistor is self-aligned to said first transistor; and a plurality of junctionless transistors,
wherein at least one of said junctionless transistors controls access to at least one of said memory cells. |
| 地址 |
San Jose CA US |
