| 摘要 |
<p>A nitride semiconductor light emitting element chip, wherein a mask pattern on a nitride semiconductor substrate (101) consists of a growth restricting film on which a nitride semiconductor layer is hard to grow, there exist a plurality of windows having this growth restricting film not formed thereon, at least two different mask widths are available between adjacent windows, the mask pattern includes a mask A group (MAG) and mask B groups (MBG) disposed on the opposite sides of the mask A group with the mask A width of the mask A group being larger than the mask B width of the mask B groups, a light emitting element structure including a nitride semiconductor substrate layer (102) for covering the windows and the mask pattern and a light emitting layer (106) containing at least one quantum well layer and formed between an n-type layer (103-105) and a p-type layer (107-110) on this substrate layer is further included, and a current constricting portion (RS) through which current is substantially injected into this light emitting layer is formed above a mask A.</p> |
