| 摘要 |
An isolation structure of a semiconductor device and a forming method thereof are provided to prevent the generation of leakage current, punchthrough and breakdown by isolating electrically adjacent elements of a strained semiconductor layer from each other using a punch stop layer. A substrate is composed of a first semiconductor layer(50), a second semiconductor layer(52), and a strained semiconductor layer(54). A first conductive type well is formed in the substrate. An isolation layer(64) for defining an active region is formed in the strained semiconductor layer and the second semiconductor layer. A second conductive type punch stop layer(62) is formed under the isolation layer.
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