发明名称 |
Nitride based semiconductor light emitting diode |
摘要 |
A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. the n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.
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申请公布号 |
US2007085095(A1) |
申请公布日期 |
2007.04.19 |
申请号 |
US20060543231 |
申请日期 |
2006.10.05 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KO KUN Y.;HWANG SEOK M.;PARK HYUNG J. |
分类号 |
H01L33/06;H01L33/10;H01L33/32;H01L33/38 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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地址 |
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