| 摘要 |
PROBLEM TO BE SOLVED: To suppress fluctuation of a film characteristic of a sputter film.SOLUTION: A film deposition apparatus 1 positioned on the opposite side to a target 14 constituting a cathode electrode 13 having a negative electrode, for forming a film by a sputtering method on a substrate W passing through a front space of the target, includes a structure 10 projecting from the target toward the substrate so as to enclose the outer edge of the target. The structure has at least spaces 21, 22 for guiding a plasma gas flow to a portion crossing the moving direction of the substrate. |
