发明名称 |
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SAME AND METHOD OF DESIGNING SAME |
摘要 |
A partial oxide film with well regions formed therebeneath isolates transistor formation regions in an SOI layer from each other. A p-type well region is formed beneath part of the partial oxide film which isolates NMOS transistors from each other, and an n-type well region is formed beneath part of the partial oxide film which isolates PMOS transistors from each other. The p-type well region and the n-type well region are formed in side-by-side relation beneath part of the partial oxide film which provides isolation between the NMOS and PMOS transistors. A body region is in contact with the well region adjacent thereto. An interconnect layer formed on an interlayer insulation film is electrically connected to the body region through a body contact provided in the interlayer insulation film. A semiconductor device having an SOI structure reduces a floating-substrate effect.
|
申请公布号 |
US2008315313(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20070866693 |
申请日期 |
2007.10.03 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YAMAGUCHI YASUO;MAEGAWA SHIGETO;IPPOSHI TAKASHI;IWAMATSU TOSHIAKI;MAEDA SHIGENOBU;HIRANO YUUICHI;MATSUMOTO TAKUJI;MIYAMOTO SHOICHI |
分类号 |
H01L21/762;H01L27/12;H01L21/331;H01L21/8238;H01L21/84;H01L27/01;H01L27/08;H01L27/092;H01L29/786;H01L31/00 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|