发明名称 DYNAMICALLY COMPENSATING FOR DEGRADATION OF A NON-VOLATILE MEMORY DEVICE
摘要 Apparatus, systems, and methods to implement dynamic memory management in nonvolatile memory devices are described. In one example, a controller comprises logic to monitor at least one performance parameter of a nonvolatile memory, determine when the at least one performance parameter passes a threshold which indicates a degradation in performance for the nonvolatile memory, and in response to the at least one performance parameter passing the threshold, to modify at least one operational attribute of the nonvolatile memory. Other examples are also disclosed and claimed.
申请公布号 US2016180958(A1) 申请公布日期 2016.06.23
申请号 US201414579971 申请日期 2014.12.22
申请人 Intel Corporation 发明人 RAGHUNATHAN SHYAM SUNDER;CHAO IWEN;GUO XIN;KALAVADE PRANAV;PARAT KRISHNA K.;ZHU FENG
分类号 G11C16/34;G11C16/26;G11C16/32;G11C16/14 主分类号 G11C16/34
代理机构 代理人
主权项 1. An electronic device, comprising: at least one processor; and at least one storage device comprising a nonvolatile memory; and a controller coupled to the memory and comprising logic to: monitor at least one performance parameter of a nonvolatile memory;determine when the at least one performance parameter passes a threshold which indicates a degradation in performance for the nonvolatile memory; andin response to the at least one performance parameter passing the threshold, to modify at least one operational attribute of the nonvolatile memory selected from the group consisting of increasing an erase voltage threshold for the nonvolatile memory, increasing a program voltage threshold for the nonvolatile memory, increasing an erase start voltage for the nonvolatile memory, increasing a program start voltage for the nonvolatile memory, modify a seeding voltage for the nonvolatile memory, modifying a true-erase voltage (TEV), modifying an erase pulse timing (TE), and modifying a select gate voltage.
地址 Santa Clara CA US