GERMANIUM OXIDE PRE-CLEAN MODULE AND PROCESS

摘要

In some embodiments, a method for integrated circuit fabrication includes removing oxide material from a surface of a substrate, where the surface includes silicon and germanium. Removing the oxide material includes depositing a halogen-containing pre-clean material on a silicon oxide-containing surface and sublimating a portion of the halogen-containing pre-clean material to expose the silicon on the surface. A passivation film is deposited on the exposed silicon. The passivation film may include chlorine. The passivation film may prevent contamination of the silicon surface by chemical species from the later sublimation, which may be at a higher temperature than the earlier sublimation. Subsequently, a remaining portion of the halogen-containing pre-clean material and the passivation film are sublimated. A target material, such as a conductive material, may subsequently be deposited on the substrate surface.

主权项

1. A method for integrated circuit fabrication, comprising:
removing oxide material from a surface of a substrate, wherein the surface comprises silicon and germanium, and wherein removing the oxide material comprises:
depositing a halogen-containing pre-clean material on the surface;preferentially sublimating a portion of the halogen-containing pre-clean material disposed over the silicon of the substrate to expose the silicon on the surface; anddepositing a passivation material on the exposed silicon.