Reverse-Conducting Gated-Base Bipolar-Conduction Devices and Methods with Reduced Risk of Warping

摘要

Reverse-conducting IGBTs where the collector side includes diode terminal regions, and the semiconductor material is much thicker through the diode terminal regions than it is through the collector regions. This exploits the area fraction which is taken up by the diode terminal regions to provide increased rigidity for the wafer, and thus avoid warping.

主权项

1. A reverse-conducting gated-base semiconductor device with bipolar conduction, comprising:
a) an emitter structure, on a first surface of a first-type semiconductor die, which includes a second-type emitter region, and a control terminal which selectably connects a first-type source terminal to the bulk of the die; b) a collector structure, on a second surface of the semiconductor die, which includes a thin second-type collector region overlain by a first-type buffer layer; c) a second-type reverse-conduction diode terminal, on the second surface; wherein the total thickness of the die, through the diode terminal, exceeds the total thickness of the die, through the collector structure.