SEMICONDUCTOR DEVICE

摘要

A power element and a temperature sensing element are formed on the same semiconductor substrate, and one end of a PN junction of the temperature sensing element is connected to a ground potential (VSS) or a power supply potential (VDD) through an intermediation of a resistor. A sum of a potential difference between both ends of the PN junction and a potential difference between both ends of the resistor is used as a temperature detection signal. The temperature sensing element can thus be formed in a recess formed in the power element while avoiding latch-up.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a power element and a temperature sensing element formed adjacent to each other on the semiconductor substrate; and a resistor formed around the temperature sensing element, the temperature sensing element having a PN junction formed in the semiconductor substrate, the PN junction having a P-type region and an N-type region, one of the P-type region and the N-type region being connected to one of a ground potential VSS and a power supply potential VDD through an intermediation of the resistor, the power element having a recess for accommodating the temperature sensing element therein, none of a well, a source, a drain, and a gate electrode of the power element being formed in the recess.