SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS

摘要

The manufacturing yield of a semiconductor device is improved. There is provided a semiconductor device of a cascode coupling system, which is equipped with a plurality of normally-on junction FETs using as a material, a substance larger in bandgap than silicon, and a normally-off MOSFET using silicon as a material. At this time, the semiconductor chip has a plurality of junction FET semiconductor chips (semiconductor chip CHP0 and semiconductor chip CHP1) formed with the junction FETs in a divided fashion, and a MOSFET semiconductor chip (semiconductor chip CHP2) formed with the MOSFET.

主权项

1. A semiconductor device, comprising:
a first semiconductor chip having a first substrate comprised of a semiconductor larger in bandgap than silicon, the first semiconductor chip being formed with a first junction FET having a first gate electrode, a first source, and a first drain; a second semiconductor chip having a second substrate comprised of a semiconductor larger in bandgap than silicon, the second semiconductor chip being formed with a second junction FET having a second gate electrode, a second source, and a second drain; and a third semiconductor chip having a third substrate comprised of silicon, the third semiconductor chip being formed with a MOSFET having a third gate electrode, a third source, and a third drain; the first source of the first junction FET and the third drain of the MOSFET being electrically coupled, the second source of the second junction FET and the third drain of the MOSFET being electrically coupled, the first gate electrode of the first junction FET and the third source of the MOSFET being electrically coupled, and the second gate electrode of the second junction FET and the third source of the MOSFET being electrically coupled.