| 发明名称 |
SEMICONDUCTOR STRUCTURE WITH AIRGAP |
| 摘要 |
A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap. |
| 申请公布号 |
US2016211167(A1) |
申请公布日期 |
2016.07.21 |
| 申请号 |
US201615083793 |
申请日期 |
2016.03.29 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JAFFE Mark D.;JOSEPH Alvin J.;LIU Qizhi;STAMPER Anthony K. |
| 分类号 |
H01L21/764;H01L21/265;H01L21/02;H01L21/027;H01L21/306;H01L21/762;H01L21/266 |
主分类号 |
H01L21/764 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming an amorphous layer under an active region of a substrate; forming an airgap in the substrate under the amorphous layer; and forming an isolated transistor in the active region, above the amorphous layer and the airgap. |
| 地址 |
Armonk NY US |
