SEMICONDUCTOR STRUCTURE INCLUDING A SPLIT GATE NONVOLATILE MEMORY CELL AND A HIGH VOLTAGE TRANSISTOR, AND METHOD FOR THE FORMATION THEREOF

摘要

A semiconductor structure includes a split gate nonvolatile memory cell and a high voltage transistor. The nonvolatile memory cell includes an active region, a nonvolatile memory stack provided above the active region, a control gate electrode provided above the memory stack, a select gate electrode at least partially provided above the active region adjacent to the memory stack and a select gate insulation layer. The high voltage transistor includes an active region, a gate electrode and a gate insulation layer provided between the active region and the gate electrode. The select gate insulation layer of the nonvolatile memory device and the gate insulation layer of the high voltage transistor are at least partially formed of a same high-k dielectric material. The select gate electrode of the nonvolatile memory device and the gate electrode of the high voltage transistor are at least partially formed of a same metal.

主权项

1. A semiconductor structure, comprising:
a split gate nonvolatile memory cell comprising an active region, a nonvolatile memory stack provided above said active region, a control gate electrode provided above said nonvolatile memory stack, a select gate electrode at least partially provided above said active region adjacent to said nonvolatile memory stack and a select gate insulation layer; and a high voltage transistor comprising an active region, a gate electrode and a gate insulation layer provided between said active region and said gate electrode; wherein said select gate insulation layer of said split gate nonvolatile memory cell and said gate insulation layer of said high voltage transistor are at least partially formed of a same high-k dielectric material; and wherein said select gate electrode of said split gate nonvolatile memory cell and said gate electrode of said high voltage transistor are at least partially formed of a same metal.