发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
The memory capacity of a DRAM is enhanced. A semiconductor memory device includes a driver circuit including part of a single crystal semiconductor substrate, a multilayer wiring layer provided over the driver circuit, and a memory cell array layer provided over the multilayer wiring layer. That is, the memory cell array overlaps with the driver circuit. Accordingly, the integration degree of the semiconductor memory device can be increased as compared to the case where a driver circuit and a memory cell array are provided in the same plane of a substrate containing a singe crystal semiconductor material. |
申请公布号 |
US2016247809(A1) |
申请公布日期 |
2016.08.25 |
申请号 |
US201615148000 |
申请日期 |
2016.05.06 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
YAMAZAKI Shunpei;TAKEMURA Yasuhiko |
分类号 |
H01L27/108;G11C11/408;H01L29/786;H01L27/06;H01L23/528;H01L23/532 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |