发明名称 SUBSTRATE-PROCESSING APPARATUS, HEATER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 [Problem] To decrease the temperature stabilization time inside a processing furnace. [Solution] The present invention has a substrate-holding tool for holding a substrate, a processing chamber for processing the substrate held in the substrate holding tool, a first heater for heating the interior of the processing furnace from outside the processing chamber, and a second heater disposed so as to be positioned inside the substrate-holding tool, for heating the substrate from the back-surface side of the substrate. The second heater is provided with: a support-column part; an annular part connected to the support-column part, the annular part being formed in an arc shape having a diameter than is smaller than the diameter of the substrate; a pair of connection parts for connecting each end of the annular part to the support-column part; and a heating element provided in the interior of the annular part.
申请公布号 WO2016135876(A1) 申请公布日期 2016.09.01
申请号 WO2015JP55366 申请日期 2015.02.25
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 MURATA, Hitoshi;YAHATA, Takashi;WADA, Yuichi;YAMAGUCHI, Takatomo;SAIDO, Shuhei
分类号 H01L21/31;C23C16/46;H01L21/318 主分类号 H01L21/31
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