发明名称 |
SUBSTRATE-PROCESSING APPARATUS, HEATER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
[Problem] To decrease the temperature stabilization time inside a processing furnace. [Solution] The present invention has a substrate-holding tool for holding a substrate, a processing chamber for processing the substrate held in the substrate holding tool, a first heater for heating the interior of the processing furnace from outside the processing chamber, and a second heater disposed so as to be positioned inside the substrate-holding tool, for heating the substrate from the back-surface side of the substrate. The second heater is provided with: a support-column part; an annular part connected to the support-column part, the annular part being formed in an arc shape having a diameter than is smaller than the diameter of the substrate; a pair of connection parts for connecting each end of the annular part to the support-column part; and a heating element provided in the interior of the annular part. |
申请公布号 |
WO2016135876(A1) |
申请公布日期 |
2016.09.01 |
申请号 |
WO2015JP55366 |
申请日期 |
2015.02.25 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
MURATA, Hitoshi;YAHATA, Takashi;WADA, Yuichi;YAMAGUCHI, Takatomo;SAIDO, Shuhei |
分类号 |
H01L21/31;C23C16/46;H01L21/318 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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