发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed is provided. In the semiconductor device, the diode region includes a second conductivity type cathode layer. An impurity concentration of second conductivity type impurities of the cathode layer is distributed in a curve pattern having at least two peaks, and the impurity concentration of the second conductivity type impurities is higher than that of first conductivity type impurities at all depths of the cathode layer. |
申请公布号 |
US2016284693(A1) |
申请公布日期 |
2016.09.29 |
申请号 |
US201615176439 |
申请日期 |
2016.06.08 |
申请人 |
Toyota Jidosha Kabushiki Kaisha |
发明人 |
KAMEYAMA Satoru |
分类号 |
H01L27/06;H01L21/268;H01L29/10;H01L29/66;H01L29/739;H01L29/861;H01L21/265;H01L29/36 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Toyota-shi JP |