| 发明名称 |
CYLINDRICAL SPUTTERING TARGET |
| 摘要 |
A cylindrical sputtering target includes a cylindrical substrate and a cylindrical sputtering target member joined together with a joining material. Where the joining material has a thickness of d (μm), the joining material has a coefficient of thermal expansion of α1 (μm/μmK), and a melting point of the joining material and room temperature have a difference of ΔT (K), a surface of the cylindrical sputtering target member on the side of the joining material has a value of ten-point average roughness (Rz) fulfilling:;d (μm)×α1 (μm/μmK)×ΔT (K)≦Rz (μm). |
| 申请公布号 |
US2016284524(A1) |
申请公布日期 |
2016.09.29 |
| 申请号 |
US201615075119 |
申请日期 |
2016.03.19 |
| 申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
TSURUTA Yoshitaka |
| 分类号 |
H01J37/34 |
主分类号 |
H01J37/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A cylindrical sputtering target, comprising:
a cylindrical substrate and a cylindrical sputtering target member joined together with a joining material; wherein where the joining material has a thickness, estimated from a difference between an inner diameter of the cylindrical sputtering target member and an outer diameter of the cylindrical substrate, of d (μm), the joining material has a coefficient of thermal expansion of α1 (μm/μmK), and a melting point of the joining material and room temperature have a difference of ΔT (K), a surface of the cylindrical sputtering target member on the side of the joining material has a value of ten-point average roughness (Rz) fulfilling:
d (μm)×α1 (μm/μmK)×ΔT (K)≦Rz (μm). |
| 地址 |
Tokyo JP |
