| 摘要 |
A method for fabricating a light emitting diode is provided to effectively remove hydrogen from a p-type gallium nitride layer by separating NH3 into mixture gas of N2, N, H2, H, NH and by making the mixture gas pass through an H-Mg doped P-type gallium nitride layer. A buffer layer(202) is formed on a sapphire substrate(200) and an N-type gallium nitride layer(203) is formed. An active layer(205) is formed on the N-type gallium nitride layer to generate light by a recombination of holes and electrons. A magnesium-doped gallium nitride layer is formed on the substrate having the active layer. After the substrate having the P-type gallium nitride layer(207) is transferred to the inside of a chamber, ammonia gas to be injected is thermally analyzed. The thermally-analyzed ammonia gas is flowed over a metal compound layer to eliminate the hydrogen separated from ammonia gas. The ammonia gas is injected over the substrate having the P-type gallium nitride layer to eliminate the hydrogen included in the P-type gallium nitride layer. A P electrode is formed. |
