发明名称 A UNIT PIXEL OF CMOS IMAGE SENSOR
摘要 A unit pixel of a CMOS(Complementary Metal Oxide Semiconductor) image sensor is provided to compensate a dark current generated in a photo diode by detecting an output voltage of a drive transistor and supplying a compensation current to the photo diode when the output voltage is reduced at a predetermined level or less. A photo diode(PD) generates and stores an optical charge. A gate of a drive transistor(Q2) receives the charge stored in the photo diode(PD), and a source of the drive transistor(Q2) outputs the received charge as a voltage value. A drain of the drive transistor(Q2) receives a power supply voltage. A saturation sensing device having an inverter(21) and a feedback line(22) receives the source voltage of the drive transistor(Q2), and judges a current state as a saturation state when the source voltage is lower than a predetermined reference voltage. A switching transistor(Q4) short-circuits/opens connection of the power supply voltage and the gate of the drive transistor(Q2) according to the saturation state judgment of the saturation sensing device.
申请公布号 KR20070013509(A) 申请公布日期 2007.01.31
申请号 KR20050067876 申请日期 2005.07.26
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KO, JOO YUL;CHOI, WON TAE;PARK, DEUK HEE;KANG, SHIN JAE
分类号 H01L27/146;H04N5/335;H04N5/361;H04N5/369;H04N5/374;H04N5/376 主分类号 H01L27/146
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