发明名称 |
A UNIT PIXEL OF CMOS IMAGE SENSOR |
摘要 |
A unit pixel of a CMOS(Complementary Metal Oxide Semiconductor) image sensor is provided to compensate a dark current generated in a photo diode by detecting an output voltage of a drive transistor and supplying a compensation current to the photo diode when the output voltage is reduced at a predetermined level or less. A photo diode(PD) generates and stores an optical charge. A gate of a drive transistor(Q2) receives the charge stored in the photo diode(PD), and a source of the drive transistor(Q2) outputs the received charge as a voltage value. A drain of the drive transistor(Q2) receives a power supply voltage. A saturation sensing device having an inverter(21) and a feedback line(22) receives the source voltage of the drive transistor(Q2), and judges a current state as a saturation state when the source voltage is lower than a predetermined reference voltage. A switching transistor(Q4) short-circuits/opens connection of the power supply voltage and the gate of the drive transistor(Q2) according to the saturation state judgment of the saturation sensing device.
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申请公布号 |
KR20070013509(A) |
申请公布日期 |
2007.01.31 |
申请号 |
KR20050067876 |
申请日期 |
2005.07.26 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KO, JOO YUL;CHOI, WON TAE;PARK, DEUK HEE;KANG, SHIN JAE |
分类号 |
H01L27/146;H04N5/335;H04N5/361;H04N5/369;H04N5/374;H04N5/376 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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