| 摘要 |
<p>A stacked thin film transistor, a non-volatile memory device and a method for fabricating the same are provided to improve costs efficiency by stacking a plurality of wordline layers, and bitline layers which include the plural bitlines. A non-volatile memory device comprises a plurality of bitline layers(110,130) and a plurality of wordline layers(120,140) sequentially formed on top of each other. The bitline layers are formed, and the wordline layers are formed above the one prior bitline layer of the plural bitline layers. When forming the bitline layers, a semiconductor layer is formed on a dielectric layer, and a plurality of bit lines are formed by patterning and etching the semiconductor layer. When the word line layers are formed, a trapping structure and a conductive structure are formed sequentially, a plurality of word lines are formed by patterning and etching the trapping structure and the conductive layer.</p> |
