METHOD OF MANUFACTURING FIELD-EFFECT TRANSISTOR, AND THE FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a field-effect transistor using an InP substrate, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device has a multilayer film structure composed of: the InP substrate 1; a buffer layer 2 formed on the InP semiconductor substrate; an electron traveling layer 3 formed on the buffer layer; a spacer layer 4 formed on the electron traveling layer; an electron supply layer 5 formed on the spacer layer; a barrier layer 6 formed on the electron supply layer; an etch-stop layer 7 formed on the barrier layer; a high-electron-density contact layer 8 formed on the etch-stop layer; and a high-electron-density cap layer 9 formed on the high-electron-density contact layer. The electron traveling layer is formed of InGaAs, and the spacer layer is formed of InAlAs; and the electron affinity of the electron supply layer is made smaller than the electron affinity of the spacer layer below the electron supply layer, and the electron supply layer is doped uniformly with an electron density of 1×1019to 3×1019/cm3. COPYRIGHT: (C)2009,JPO&INPIT