发明名称 APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON
摘要 Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor.
申请公布号 US2016319430(A1) 申请公布日期 2016.11.03
申请号 US201615206070 申请日期 2016.07.08
申请人 Shin-Etsu Chemical Co., Ltd. 发明人 KUROSAWA Yasushi;NETSU Shigeyoshi
分类号 C23C16/455;C01B33/035 主分类号 C23C16/455
代理机构 代理人
主权项
地址 Tokyo JP