发明名称 |
APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON |
摘要 |
Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor. |
申请公布号 |
US2016319430(A1) |
申请公布日期 |
2016.11.03 |
申请号 |
US201615206070 |
申请日期 |
2016.07.08 |
申请人 |
Shin-Etsu Chemical Co., Ltd. |
发明人 |
KUROSAWA Yasushi;NETSU Shigeyoshi |
分类号 |
C23C16/455;C01B33/035 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |