发明名称 Techniques for Spin-on-Carbon Planarization
摘要 Systems and methods for SOC planarization are described. In an embodiment, an apparatus for SOC planarization includes a substrate holder configured to support a microelectronic substrate. Additionally, the apparatus may include a light source configured to emit ultraviolet (UV) light toward a surface of the microelectronic substrate. In an embodiment, the apparatus may also include an isolation window disposed between the light source and the microelectronic substrate. Also, the apparatus may include a gas distribution unit configured to inject gas in a region between the isolation window and the microelectronic substrate. Furthermore, the apparatus may include an etchback leveling component configured to reduce non-uniformity of a UV light treatment of the microelectronic substrate.
申请公布号 WO2016196739(A1) 申请公布日期 2016.12.08
申请号 WO2016US35438 申请日期 2016.06.02
申请人 TOKYO ELECTRON LIMITED;TOKYO ELECTRON U.S. HOLDINGS, INC. 发明人 HOOGE, Joshua S.;RATHSACK, Benjamen M.;CARCASI, Michael A.;SOMERVELL, Mark H.;BROWN, Ian J.;PRINTZ, Wallace P.
分类号 H01L21/027;H01L21/02;H01L21/28;H01L21/311;H01L21/762 主分类号 H01L21/027
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