| 摘要 |
In a method of manufacturing a semiconductor device with a MOS transistor, a channel impurity doped layer of a first conductive type is formed in a silicon substrate. First material is implanted into regions for diffusion layers of a second conductive type as sources/drains of the MOS transistor in the channel impurity doped layer. Heat treatment is carried out after the implanting process of the first material. Then, the diffusion layers are formed in the silicon substrate after the carrying out heat treatment.
|
