发明名称 METHOD OF FABRICATION OF AL/GE BONDING IN A WAFER PACKAGING ENVIRONMENT AND A PRODUCT PRODUCED THEREFROM
摘要 A wafer structure comprising a first substrate comprising a cover wafer, the first substrate including at least one patterned germanium layer; and a second substrate, the second substrate including at least one patterned aluminum layer; characterized in that the at least one patterned germanium layer is bonded to a first portion of the at least one patterned aluminum layer to provide a eutectic alloy and create an electrical and mechanical contact; characterized in that a second portion of the at least one patterned aluminum layer is not bonded to the at least one patterned germanium layer and forms an external bond pad; and characterized in that the first substrate and second substrate form a cavity containing a MEMS structure within the bonded at least one germanium layer and first portion of the at least one patterned aluminum layer.
申请公布号 EP1859475(A2) 申请公布日期 2007.11.28
申请号 EP20060737697 申请日期 2006.03.09
申请人 INVENSENSE INC. 发明人 NASIRI, STEVEN, S.;FLANNERY, ANTHONY, FRANCIS, JR.
分类号 B81C1/00;H01L21/00;H01L21/30;H01L23/48;H01L27/14;H01L29/82 主分类号 B81C1/00
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