发明名称 |
MEMORY DEVICE EMPLOYING MAGNETIC DOMAIN WALL MOVEMENT |
摘要 |
Provided is a memory device employing magnetic domain wall movement. The memory device includes a writing track and a column structure. The writing track forms magnetic domains that have predetermined magnetization directions. The column structure is formed on the writing track and includes at least one interconnecting layer and at least one storage track.
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申请公布号 |
US2008068880(A1) |
申请公布日期 |
2008.03.20 |
申请号 |
US20070850988 |
申请日期 |
2007.09.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM CHEE-KHENG;KIM EUN-SIK;HWANG IN-JUN |
分类号 |
G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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