| 摘要 |
A memory circuit and a method is provided for programming a dual-gate memory cell without program disturb in other dual-gate memory cells in the memory circuit coupled by common word lines (see FIG 3) In one embodiment, the method uses a self-boosting technique on unselected memory cells having source and drain regions in the shared semiconductor layer between their memory devic and their access devices brought to a predetermined voltage close to the threshold voltage of their access devices, thereby rendering th source and drain regions substantially floating In some embodiments, the source and drain regions are brought to the predetermined voltage via one or more select gates and intervening access gates In some embodiments, the select gates are overdriven (see FIGs 7- 12).
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