APD USING MODULATION DOPED ABSORBER

摘要

The present invention relates to an avalanche photodiode using a modulated doping absorption layer. The avalanche photodiode using a modulated doping absorption layer comprises a absorption layer and a multiplication layer separated from each other. The absorption layer is modulated into a combination of an electric field-applied absorption layer and a doped absorption layer. The doped absorption layer is formed between the electric field-applied absorption layer and a non-absorption layer. The doped absorption layer includes a doping layer having a doping concentration that is relatively lower than a doping concentration of the electric field-applied absorption layer. Therefore, since the modulated doping adsorption layer is formed by adding a doping layer into an existing absorption layer, it is possible to improve efficiency while maintaining frequency characteristics.