NON-STOICHIOMETRIC RESISTIVE SWITCHING MEMORY DEVICE AND FABRICATION METHODS

摘要

Providing for a resistive switching memory device is described herein. By way of example, the resistive switching memory device can comprise a bottom electrode, a conductive layer, a resistive switching layer, and a top electrode. Further, two or more layers can be selected to mitigate mechanical stress on the device. In various embodiments, the resistive switching layer and conductive layer can be formed of compatible metal nitride or metal oxide materials having different nitride/oxide concentrations and different electrical resistances. Further, similar materials can mitigate mechanical stress on the resistive switching layer and a conductive filament of the resistive switching memory device.

主权项

1. A resistive switching device, comprising:
a bottom electrode disposed overlying a semiconductor substrate; a switching medium overlying the bottom electrode, the switching medium comprising:
a resistive switching material formed of a metal and nitrogen material: MNy, where y is a positive number;a conductor material in contact with the resistive switching material and comprising a second metal and nitrogen material: MNx, wherein x is a positive number and y>x; and a top electrode disposed above the switching medium.