| 主权项 |
1. A method for producing a semiconductor device, the method comprising:
a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate, forming a first insulating film around the fin-shaped semiconductor layer, and etching the first insulating film to expose an upper portion of the fin-shaped semiconductor layer; a second step of, after the first step, forming a second insulating film around the upper portion of the fin-shaped semiconductor layer, depositing a first polysilicon on the second insulating film and planarizing the first polysilicon, forming a second resist for forming a gate line and a pillar-shaped semiconductor layer, in a direction perpendicular to a direction of the fin-shaped semiconductor layer, and etching the first polysilicon, the second insulating film, and the fin-shaped semiconductor layer to form a pillar-shaped semiconductor layer and a first dummy gate formed of the first polysilicon; a third step of, after the second step, forming a fourth insulating film around the pillar-shaped semiconductor layer and the first dummy gate and forming a second dummy gate on side walls of the first dummy gate and the pillar-shaped semiconductor layer; a fourth step of, after the third step, forming a fifth insulating film and a sixth insulating film around the second dummy gate; a fifth step of, after the fourth step, depositing a first interlayer insulating film, performing chemical mechanical polishing to expose upper portions of the second dummy gate and the first dummy gate, removing the second dummy gate and the first dummy gate, removing the second insulating film and the fourth insulating film, forming a gate insulating film around the pillar-shaped semiconductor layer, depositing metal, and performing etch back to form a gate electrode and a gate line; and a sixth step of, after the fifth step, forming a first diffusion layer in an upper portion of the pillar-shaped semiconductor layer. |
