III-V MOSFET WITH STRAINED CHANNEL AND SEMI-INSULATING BOTTOM BARRIER

摘要

Embodiments include a method for fabricating a semiconductor device and the resulting structure comprising forming a semi-insulating bottom barrier on a semiconductor substrate. A channel is formed on the bottom barrier. A semi-insulating layer is epitaxially formed on the bottom barrier, laterally adjacent to the channel. The semi-insulating layer is formed in such a way that stress is induced onto the channel. A CMOS transistor is formed on the channel.

主权项

1. A method for constructing a MOSFET semiconductor device, the method comprising:
epitaxially forming a channel on a bottom barrier, wherein the bottom barrier is semi-insulating, and strain is induced onto the channel; forming a gate structure on the channel; forming a source region and a drain region on the channel laterally adjacent to the gate structure; and epitaxially forming a semi-insulating layer of a height adjacent to the channel on the bottom barrier, wherein the semi-insulating layer induces a strain onto the channel;