发明名称 |
SEAL RING STRUCTURE TO AVOID DELAMINATION DEFECT |
摘要 |
A semiconductor device includes a semiconductor substrate, a plurality of integrated circuit devices on the semiconductor substrate, and a seal ring structure surrounding each one of the integrated circuit devices. The seal ring structure includes a plurality of interlayer dielectric layers and a plurality of hollow through-hole structures disposed within each of the interlayer dielectric layers. Each of the hollow through-hole structure within an interlayer dielectric layer includes a through-hole disposed within one of the interlayer dielectric layers, a diffusion barrier layer formed at the bottom, sidewalls and the top of the through-hole, and a seed layer disposed on the diffusion barrier layer. The diffusion barrier layer and the seed layer cover the top of the through-hole so that the through-hole has a void to form the hollow through-hole structure. |
申请公布号 |
US2016343673(A1) |
申请公布日期 |
2016.11.24 |
申请号 |
US201615157318 |
申请日期 |
2016.05.17 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
LING LONG |
分类号 |
H01L23/00;H01L23/532;H01L21/768;H01L21/78 |
主分类号 |
H01L23/00 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor device comprising:
a semiconductor substrate; a plurality of integrated circuit (IC) devices on the semiconductor substrate; and a seal ring structure surrounding each one of the integrated circuit devices, the seal ring structure comprising a plurality of interlayer dielectric layers and a plurality of hollow through-hole structures disposed within each of the interlayer dielectric layers. |
地址 |
Shanghai CN |