发明名称 SEAL RING STRUCTURE TO AVOID DELAMINATION DEFECT
摘要 A semiconductor device includes a semiconductor substrate, a plurality of integrated circuit devices on the semiconductor substrate, and a seal ring structure surrounding each one of the integrated circuit devices. The seal ring structure includes a plurality of interlayer dielectric layers and a plurality of hollow through-hole structures disposed within each of the interlayer dielectric layers. Each of the hollow through-hole structure within an interlayer dielectric layer includes a through-hole disposed within one of the interlayer dielectric layers, a diffusion barrier layer formed at the bottom, sidewalls and the top of the through-hole, and a seed layer disposed on the diffusion barrier layer. The diffusion barrier layer and the seed layer cover the top of the through-hole so that the through-hole has a void to form the hollow through-hole structure.
申请公布号 US2016343673(A1) 申请公布日期 2016.11.24
申请号 US201615157318 申请日期 2016.05.17
申请人 SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION 发明人 LING LONG
分类号 H01L23/00;H01L23/532;H01L21/768;H01L21/78 主分类号 H01L23/00
代理机构 代理人
主权项 1. A semiconductor device comprising: a semiconductor substrate; a plurality of integrated circuit (IC) devices on the semiconductor substrate; and a seal ring structure surrounding each one of the integrated circuit devices, the seal ring structure comprising a plurality of interlayer dielectric layers and a plurality of hollow through-hole structures disposed within each of the interlayer dielectric layers.
地址 Shanghai CN
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