MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To improve a deposition rate of a boron-nitride film containing a borazine ring skeleton.SOLUTION: The manufacturing method of a semiconductor device includes a step of forming a film on a substrate, having a borazine ring skeleton, containing boron and nitrogen by intermittently and simultaneously performing a step of providing the substrate with borazine gas containing a ligand and a step of providing the substrate with a ligand desorption gas for desorbing the ligand under a condition in which the borazine skeleton of the borazine gas is kept.SELECTED DRAWING: Figure 4