| 发明名称 |
Tunneling magnetoresistive thin layer element for magnetic sensors and magnetic data reading heads has tunnel barrier layer of yttrium oxide |
| 摘要 |
<p>A magnetoresistive thin layer element (2) having an enhanced tunneling magnetoresistive effect comprises two ferromagnetic electrode layers (3,4) of equal magnetic hardness with an isolating tunnel barrier layer (5) between them comprising yttrium oxide.</p> |
| 申请公布号 |
DE10309243(A1) |
申请公布日期 |
2004.09.23 |
| 申请号 |
DE2003109243 |
申请日期 |
2003.03.03 |
| 申请人 |
SIEMENS AG |
发明人 |
DIMOPOULOS, THEODOROS;GIERES, GUENTER;WECKER, JOACHIM |
| 分类号 |
H01F10/32;H01L43/08;(IPC1-7):H01L43/08 |
主分类号 |
H01F10/32 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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