发明名称 バイポーラトランジスタ及び半導体装置並びにバイポーラトランジスタの製造方法
摘要 Disconnection of a base line is suppressed even when a short-side direction of a collector layer is parallel to crystal orientation [011]. A bipolar transistor includes: a collector layer that has a long-side direction and a short-side direction in a plan view, in which the short-side direction is parallel to crystal orientation [011], a cross-section perpendicular to the short-side direction has an inverted mesa shape, and a cross-section perpendicular to the long-side direction has a forward mesa shape; a base layer that is formed on the collector layer; a base electrode that is formed on the base layer; and a base line that is connected to the base electrode and that is drawn out from an end in the short-side direction of the collector layer to the outside of the collector layer in a plan view.
申请公布号 JP5907480(B2) 申请公布日期 2016.04.26
申请号 JP20130159358 申请日期 2013.07.31
申请人 株式会社村田製作所 发明人 佐々木 健次
分类号 H01L21/331;H01L21/8232;H01L27/06;H01L27/095;H01L29/161;H01L29/20;H01L29/737 主分类号 H01L21/331
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