| 发明名称 |
METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR STRUCTURE COMPRISING A PLURALITY OF GATE STACKS ON A SEMICONDUCTOR SUBSTRATE, AND CORRESPONDING SEMICONDUCTOR STRUCTURE |
| 摘要 |
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| 申请公布号 |
EP1516365(A1) |
申请公布日期 |
2005.03.23 |
| 申请号 |
EP20030735476 |
申请日期 |
2003.05.27 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
AMON, JUERGEN;FAUL, JUERGEN;RUDER, THOMAS;SCHUSTER, THOMAS |
| 分类号 |
H01L21/60;H01L21/8242;H01L27/108;H01L29/04;H01L29/10;H01L31/036;H01L31/0376;H01L31/20;(IPC1-7):H01L27/108;H01L21/824 |
主分类号 |
H01L21/60 |
| 代理机构 |
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| 主权项 |
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