Method of forming a low temperature-grown buffer layer, light emitting element, method of making same, and light emitting device

摘要

A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga₂O₃ substrate in a MOCVD apparatus; providing a H₂ atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH₃ onto the Ga₂O₃ substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga₂O₃ substrate.