| 发明名称 | Metal stack for reduced gate resistance | ||
| 摘要 | A method includes forming an n-FET device and a p-FET device on a substrate, each of the n-FET device and the p-FET device include a metal gate stack consisting of a titanium-aluminum carbide (TiAlC) layer above and in direct contact with a titanium nitride (TiN) cap, and removing, from the p-FET device, the TiAlC layer selective to the TiN cap. The removal of the TiAlC layer includes using a selective TiAlC to TiN wet etch chemistry solution with a substantially high TiAlC to TiN etch ratio such that the TiN cap remains in the p-FET device. | ||
| 申请公布号 | US9343372(B1) | 申请公布日期 | 2016.05.17 |
| 申请号 | US201414583835 | 申请日期 | 2014.12.29 |
| 申请人 | GlobalFoundries, Inc. | 发明人 | Bao Ruqiang;Kwon Unoh;Rajaram Rekha;Wong Keith Kwong Hon |
| 分类号 | H01L21/8238;H01L27/092;H01L29/40;H01L29/51;H01L21/3213;H01L29/66;H01L29/49 | 主分类号 | H01L21/8238 |
| 代理机构 | Hoffman Warnick LLC | 代理人 | Cai Yuanmin;Hoffman Warnick LLC |
| 主权项 | 1. A method comprising: forming an n-FET device and a p-FET device on a substrate, wherein each of the n-FET device and the p-FET device include a metal gate stack comprising a titanium-aluminum carbide (TiAlC) layer above and in direct contact with a titanium nitride (TiN) cap; and removing, from the p-FET device, the TiAlC layer selective to the TiN cap, wherein removing the TiAlC layer comprises using a selective TiAlC to TiN wet etch chemistry solution with a substantially high TiAlC to TiN etch ratio such that the TiN cap remains in the p-FET device. | ||
| 地址 | Grand Cayman KY | ||