发明名称 METHOD FOR FILM FORMATION, APPARATUS FOR FILM FORMATION, COMPUTER PROGRAM, AND STORAGE MEDIUM
摘要 <p>This invention provides a method for film formation, comprising properly selecting process conditions for the formation of a film such as a barrier layer or an auxiliary seed film, shaving off the bottom part of a recess part under the process conditions, and forming a thin film on the side and upper faces while removing a layer causative of an electrical resistance rise in the bottom part of the shaved recess part. A metallic target (78) is ionized within a processing container (34) to produce metal ion-containing metallic particles, and metallic particles are drawn into an object (W) mounted on a mounting table (44) by bias electric power to form a thin film on the surface of the object with a recess part (5) formed in the surface thereof. While the bottom part of the lowermost layer in the recess part in the object is shaven to form a shaved recess part (12), a first metal-containing barrier layer (10) is formed on the object in its whole surface including the surface within the recess part (barrier layer formation step). Next, the bottom part of the shaved recess part is further shaved, and a second metal-containing auxiliary seed film (14A) for plating is formed on the object in its surface including the surface within the recess part (auxiliary seed film formation step).</p>
申请公布号 WO2008016004(A1) 申请公布日期 2008.02.07
申请号 WO2007JP64891 申请日期 2007.07.30
申请人 TOKYO ELECTRON LIMITED;IKEDA, TARO;MIZUSAWA, YASUSHI;SAKUMA, TAKASHI;YOKOYAMA, OSAMU;HATANO, TATSUO 发明人 IKEDA, TARO;MIZUSAWA, YASUSHI;SAKUMA, TAKASHI;YOKOYAMA, OSAMU;HATANO, TATSUO
分类号 H01L21/768;C23C14/06;H01L21/285;H01L21/3205;H01L23/52 主分类号 H01L21/768
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