| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting structure of a light emitting element ensuring excellent power efficiency. <P>SOLUTION: The semiconductor light emitting element includes a light emitting structure 25 and an exposing part 21s for exposing a first conductivity type semiconductor layer 21 in a semiconductor structure 20 including the semiconductor layers 21, 23 of the first and second conductivity types. A first electrode 30 and a second electrode 40 included are respectively provided on the first conductivity type semiconductor layer 21 and the second conductivity type semiconductor layer 23 in the same surface side of the semiconductor element structure. The first electrode is provided to the exposing part 21s of the first conductivity type semiconductor layer 21. At least a first layer 31 conductive to the first conductivity type semiconductor through a light transmitting conductive film and a second layer 32 provided on the first layer conductive to the first layer are also provided and a first light transmitting insulating film 17 is provided to be overlapped with at least a part of the second layer between the first conductivity type semiconductor layer of the exposing part and the second layer 32. Accordingly, the structure attained is provided with a connecting part for external power supply and is suitable for injection of a current. In addition, this structure can lower optical loss. <P>COPYRIGHT: (C)2008,JPO&INPIT |
