发明名称 |
INSULATED GATE FIELD EFFECT SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME |
摘要 |
An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.
|
申请公布号 |
US2009072238(A1) |
申请公布日期 |
2009.03.19 |
申请号 |
US20080277547 |
申请日期 |
2008.11.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TAKEMURA YASUHIKO;ZHANG HONGYONG |
分类号 |
H01L29/78;G02F1/1362;H01L21/265;H01L21/336;H01L21/60;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/49;H01L29/786 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|