Single crystal ingot, semiconductor wafer and method of manufacturing semiconductor wafers

摘要

An embodiment of a method of manufacturing semiconductor wafers comprises forming a notch or a flat in a semiconductor ingot extending along an axial direction. A plurality of markings are formed in the semiconductor ingot. At least some of the plurality of markings at different positions along the axial direction are distinguishable from each other by a characteristic feature. The semiconductor ingot is then sliced into semiconductor wafers.

主权项

1. A method of manufacturing semiconductor wafers, comprising:
forming a notch or a flat in a semiconductor ingot extending along an axial direction; forming a plurality of markings in the circumference of the semiconductor ingot, wherein at least some of the plurality of markings at different positions along the axial direction are distinguishable from each other by a characteristic feature, and wherein an entirety of markings at a first axial position of the semiconductor ingot is distinguishable from an entirety of markings at a second axial position of the semiconductor ingot; and thereafter slicing the semiconductor ingot into semiconductor wafers.