METHOD FOR FORMING SINGLE DIFFUSION BREAKS BETWEEN FINFET DEVICES AND THE RESULTING DEVICES

摘要

A method includes forming a fin in a semiconductor substrate. A plurality of sacrificial gate structures are formed above the fin. A selected one of the sacrificial gate structures is removed to define a first opening that exposes a portion of the fin. An etch process is performed through the first opening on the exposed portion of the fin to define a first recess in the fin. The first recess is filled with a dielectric material to define a diffusion break in the fin. A device includes a fin defined in a substrate, a plurality of gates formed above the fin, a plurality of recesses filled with epitaxial material defined in the fin, and a diffusion break defined at least partially in the fin between two of the recesses filled with epitaxial material and extending above the fin.

主权项

1. A method, comprising:
forming a fin in a semiconductor substrate; forming a plurality of sacrificial gate structures above said fin; forming an interlayer dielectric layer above said sacrificial gate structures; planarizing said interlayer dielectric layer to expose said sacrificial gate structures, forming a hard mask layer above said interlayer dielectric layer and above said sacrificial gate structures, forming a first opening in said hard mask layer so as to expose a selected one of said sacrificial gate structures; removing said selected one of said sacrificial gate structures to define second opening that exposes a portion of said fin; performing an etch process through said second opening on said exposed portion of said fin to define a first recess in said fin; forming a dielectric material layer above said hard mask layer so as to fill said first recess and to define a diffusion break in said fin; planarizing said dielectric material layer using said hard mask layer as a stop layer; and performing an etch process to remove said hard mask layer after planarizing said dielectric material layer.