发明名称 METHOD OF MAKING DEVICE WITH SUBMICRON JOSEPHSON π-CONTACT
摘要 FIELD: chemistry.SUBSTANCE: invention can be used for making a device with a submicron Josephson π-contact. Present invention consists in that method of making device with a submicron Josephson πcontact comprises using as weak interconnection of Josephson junction, a single nanowire, formed from a series of alternating magnetic and nonmagnetic sections so that magnetic section has submicron dimensions in all directions X, Y, Z, where Z is directed along nanowire and non-magnetic sections are made of superconducting material or from normal metal long coherence lengths ξ, that is placed horizontally on a substrate and fed to non-magnetic sections of superconducting contacts.EFFECT: technical result is achieving high electrophysical parameters.10 cl, 2 dwg
申请公布号 RU2599904(C1) 申请公布日期 2016.10.20
申请号 RU20150125657 申请日期 2015.06.29
申请人 federalnoe gosudarstvennoe avtonomnoe obrazovatelnoe uchrezhdenie vysshego obrazovaniya "Moskovskij fiziko-tekhnicheskij institut (gosudarstvennyj universitet)" 发明人 Stolyarov Vasilij Sergeevich
分类号 H01L39/22;B82B3/00 主分类号 H01L39/22
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